SOD-123FL 2A Series Schottky diode

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SOD-123FL 2A Series Schottky diode

Package name: SOD-123FL
Terminals: Solderable per MIL-STD
Certification: RoHS
Packaging: in reel
Metal silicon junction, majority carrier conduction
For surface mounted applications

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Low power loss, high efficiency

High forward surge current capability

For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical

※ Disclaimer

Users should verify actual device performance in their specific applications.

Specifications are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.

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Parameter	Symbols	DS22	DS24	DS26	DS28	DS210	DS212	DS215	DS220	Units
Maximum Repetitive Peak Reverse Voltage	VRRM	20	40	60	80	100	120	150	200	V
Maximum RMS voltage	VRMS	14	28	42	56	70	84	105	140	V
Maximum DC Blocking Voltage	VDC	20	40	60	80	100	120	150	200	V
Maximum Average Forward Rectified Current	IF(AV)	2								A
Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)	IFSM	50								A
Max Instantaneous Forward Voltage at 1 A	VF	0.55		0.70		0.85		0.90		V
Maximum DC Reverse Current Ta=25℃ at Rated DC Reverse Voltage Ta=100℃	lR	0.5 5			0.3 3					mA
Typical Junction Capacitance¹	CJ	220		80						pF
Typical Thermal Resistance²	RBJA	85								℃/W
Operating Junction Temperature Range	Tj	-55～+125								℃
Storage Temperature Range	Tstg	-55～+150								℃

Parameter	Symbols	DS22	DS24	DS26	DS28	DS210	DS212	DS215	DS220	Units
Maximum Repetitive Peak Reverse Voltage	VRRM	20	40	60	80	100	120	150	200	V
Maximum RMS voltage	VRMS	14	28	42	56	70	84	105	140	V
Maximum DC Blocking Voltage	VDC	20	40	60	80	100	120	150	200	V
Maximum Average Forward Rectified Current	IF(AV)	2								A
Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)	IFSM	50								A
Max Instantaneous Forward Voltage at 1 A	VF	0.55		0.70		0.85		0.90		V
Maximum DC Reverse Current Ta=25℃ at Rated DC Reverse Voltage Ta=100℃	lR	0.5 5			0.3 3					mA
Typical Junction Capacitance¹	CJ	220		80						pF
Typical Thermal Resistance²	RBJA	85								℃/W
Operating Junction Temperature Range	Tj	-55～+125								℃
Storage Temperature Range	Tstg	-55～+150								℃

Name	VRRM V	VRRS V	VDC V	IF(AV) A	IFSM A	VF * V	IR(MA)25℃	IR(MA)100℃	RθJL* ℃/W	Tj℃	Tstg℃
DS22	20	14	20	2	50	0.55	0.5	5	220	85	-55℃~﹢125℃
DS24	40	28	40	2	50	0.55	0.5	5	220	85	-55℃~﹢125℃
DS26	60	42	60	2	50	0.7	0.5	5	80	85	-55℃~﹢125℃
DS28	80	56	80	2	50	0.7	0.3	3	80	85	-55℃~﹢125℃
DS210	100	70	100	2	50	0.85	0.3	3	80	85	-55℃~﹢125℃
DS212	120	84	120	2	50	0.85	0.3	3	80	85	-55℃~﹢125℃
DS215	150	105	150	2	50	0.95	0.3	3	80	85	-55℃~﹢125℃
DS220	200	140	200	2	50	0.95	0.3	3	80	85	-55℃~﹢125℃

Name	VRRM V	VRRS V	VDC V	IF(AV) A	IFSM A	VF * V	IR(MA)25℃	IR(MA)100℃	RθJL* ℃/W	Tj℃	Tstg℃
DS22	20	14	20	2	50	0.55	0.5	5	220	85	-55℃~﹢125℃
DS24	40	28	40	2	50	0.55	0.5	5	220	85	-55℃~﹢125℃
DS26	60	42	60	2	50	0.7	0.5	5	80	85	-55℃~﹢125℃
DS28	80	56	80	2	50	0.7	0.3	3	80	85	-55℃~﹢125℃
DS210	100	70	100	2	50	0.85	0.3	3	80	85	-55℃~﹢125℃
DS212	120	84	120	2	50	0.85	0.3	3	80	85	-55℃~﹢125℃
DS215	150	105	150	2	50	0.95	0.3	3	80	85	-55℃~﹢125℃
DS220	200	140	200	2	50	0.95	0.3	3	80	85	-55℃~﹢125℃

SOD-123FL 2A Series Schottky diode

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