SOD-123FL 1A Series Schottky diode

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SOD-123FL 1A Series Schottky diode

Package name：SOD-123FL
Metal silicon junction, majority carrier conduction
For surface mounted applications
Low power loss, high efficiency
High forward surge current capability
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

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Suitable for low voltage, high frequency rectification as well as freewheeling and polarity protection diodes in a variety of surface mount applications.

Terminals: Solderable per MIL-STD-750, Method 2026

※ Disclaimer

Users should verify actual device performance in their specific applications.

Specifications are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.

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Parameter	Symbols	DS12	DS14	DS16	DS18	DS110	DS112	DS115	DS120	Units
Maximum Repetitive Peak Reverse Voltage	VRRM	20	40	60	80	100	120	150	200	V
Maximum RMS voltage	VRMS	14	28	42	56	70	84	105	140	V
Maximum DC Blocking Voltage	Voc	20	40	60	80	100	120	150	200	V
Maximum Average Forward Rectified Current	IF(AV)	1								A
Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)	IFSM	25								A
Max Instantaneous Forward Voltage at 1 A	VF	0.55		0.70		0.85		0.90		V
Maximum DC Reverse Current Ta=25℃ at Rated DC Reverse Voltage Ta=100℃	lk	0.3 10				0.2 5		0.1 2		mA
Typical Junction Capacitance¹	C	110		80						pF
Typical Thermal Resistance²	ReJA	100								℃/W
Operating Junction Temperature Range	Tj	-55～+125								℃
Storage Temperature Range	Tstg	-55～+150								℃

Parameter	Symbols	DS12	DS14	DS16	DS18	DS110	DS112	DS115	DS120	Units
Maximum Repetitive Peak Reverse Voltage	VRRM	20	40	60	80	100	120	150	200	V
Maximum RMS voltage	VRMS	14	28	42	56	70	84	105	140	V
Maximum DC Blocking Voltage	Voc	20	40	60	80	100	120	150	200	V
Maximum Average Forward Rectified Current	IF(AV)	1								A
Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method)	IFSM	25								A
Max Instantaneous Forward Voltage at 1 A	VF	0.55		0.70		0.85		0.90		V
Maximum DC Reverse Current Ta=25℃ at Rated DC Reverse Voltage Ta=100℃	lk	0.3 10				0.2 5		0.1 2		mA
Typical Junction Capacitance¹	C	110		80						pF
Typical Thermal Resistance²	ReJA	100								℃/W
Operating Junction Temperature Range	Tj	-55～+125								℃
Storage Temperature Range	Tstg	-55～+150								℃

Name	VRRM V	VRRS V	VDC V	IF(AV) A	IFSM A	VF * V	IR(MA)25℃	IR(MA)100℃	RθJL* ℃/W	Tj℃	Tstg℃
DS12	20	14	20	1	25	0.55	0.3	10	110	100	-55℃~﹢125℃
DS14	40	28	40	1	25	0.55	0.3	10	110	100	-55℃~﹢125℃
DS16	60	42	60	1	25	0.7	0.3	10	80	100	-55℃~﹢125℃
DS18	80	56	80	1	25	0.7	0.3	10	110	100	-55℃~﹢125℃
DS110	100	70	100	1	25	0.85	0.2	5	80	100	-55℃~﹢125℃
DS112	120	84	120	1	25	0.85	0.2	5	80	100	-55℃~﹢125℃
DS115	150	105	150	1	25	0.9	0.1	2	80	100	-55℃~﹢125℃
DS120	200	140	200	1	25	0.9	0.1	2	80	100	-55℃~﹢125℃

Name	VRRM V	VRRS V	VDC V	IF(AV) A	IFSM A	VF * V	IR(MA)25℃	IR(MA)100℃	RθJL* ℃/W	Tj℃	Tstg℃
DS12	20	14	20	1	25	0.55	0.3	10	110	100	-55℃~﹢125℃
DS14	40	28	40	1	25	0.55	0.3	10	110	100	-55℃~﹢125℃
DS16	60	42	60	1	25	0.7	0.3	10	80	100	-55℃~﹢125℃
DS18	80	56	80	1	25	0.7	0.3	10	110	100	-55℃~﹢125℃
DS110	100	70	100	1	25	0.85	0.2	5	80	100	-55℃~﹢125℃
DS112	120	84	120	1	25	0.85	0.2	5	80	100	-55℃~﹢125℃
DS115	150	105	150	1	25	0.9	0.1	2	80	100	-55℃~﹢125℃
DS120	200	140	200	1	25	0.9	0.1	2	80	100	-55℃~﹢125℃

SOD-123FL 1A Series Schottky diode

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