SMA 1A Series Schottky diode

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SMA 1A Series Schottky diode

Package name：SMA DO-214AC
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per JESD22-B102D
Polarity: Laser band denotes cathode end

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Features

Low profile package
Ideal for automated placement
Low power losses, high efficiency
Low forward voltage drop
High surge capability
High temperature soldering：260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC

Application

switching power supply
charger
Power Adapter
LED light driver
Charging pile charging cabinet
Motor electromechanical equipment
Welding machine mining equipment
Electrical automation equipment

※Disclaimer

Users should verify actual device performance in their specific applications.

Specifications are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.

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Parameter	Symbols	SS12	SS13	SS14	SS15	SS16	SS18	SS110	SS115	SS120	Units
Maximum Repetitive Peak Reverse Voltage	VRRM	20	30	40	50	60	80	100	150	200	V
Maximum RMS voltage	VRMS	14	21	28	35	42	56	70	105	140	V
Maximum DC Blocking Voltage	Voc	20	30	40	50	60	80	100	150	200	V
Maximum Average Forward Rectified Current	IF(AV)	1.0									A
Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load	IFSM	40									A
Voltage rate of change (rated VR)	dv/dt	10000									V/μs
Thermal resistance from junction to lead (1)	RθJL	35									℃/W
Operating Junction Temperature Range	Tj，TSTG	-65～+125									℃

Parameter	Symbols	SS12	SS13	SS14	SS15	SS16	SS18	SS110	SS115	SS120	Units
Maximum Repetitive Peak Reverse Voltage	VRRM	20	30	40	50	60	80	100	150	200	V
Maximum RMS voltage	VRMS	14	21	28	35	42	56	70	105	140	V
Maximum DC Blocking Voltage	Voc	20	30	40	50	60	80	100	150	200	V
Maximum Average Forward Rectified Current	IF(AV)	1.0									A
Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load	IFSM	40									A
Voltage rate of change (rated VR)	dv/dt	10000									V/μs
Thermal resistance from junction to lead (1)	RθJL	35									℃/W
Operating Junction Temperature Range	Tj，TSTG	-65～+125									℃

Name	VRRM V	VRRS V	VDC V	IF(AV) A	IFSM A	VF * V	IR(MA)25℃	IR(MA)100℃	RθJL* ℃/W	RθJL℃/W
SS12	20	14	20	1	30	0.5	0.2	50	28	88
SS13	30	21	30	1	30	0.5	0.2	50	28	88
SS14	40	28	40	1	30	0.7	0.05	10	30	88
SS15	50	35	50	1	30	0.74	0.05	10	30	88
SS16	60	42	60	1	30	0.74	0.05	10	30	88
SS18	80	56	80	1	30	0.8	0.05	5	30	88
SS19	90	63	90	1	30	0.8	0.05	5	30	88
SS110	100	70	100	1	30	0.8	0.05	2	30	88
SS115	150	105	150	1	30	0.9	0.02	2	30	88
SS120	200	140	200	1	30	0.9	0.02	2	30	88

Name	VRRM V	VRRS V	VDC V	IF(AV) A	IFSM A	VF * V	IR(MA)25℃	IR(MA)100℃	RθJL* ℃/W	RθJL℃/W
SS12	20	14	20	1	30	0.5	0.2	50	28	88
SS13	30	21	30	1	30	0.5	0.2	50	28	88
SS14	40	28	40	1	30	0.7	0.05	10	30	88
SS15	50	35	50	1	30	0.74	0.05	10	30	88
SS16	60	42	60	1	30	0.74	0.05	10	30	88
SS18	80	56	80	1	30	0.8	0.05	5	30	88
SS19	90	63	90	1	30	0.8	0.05	5	30	88
SS110	100	70	100	1	30	0.8	0.05	2	30	88
SS115	150	105	150	1	30	0.9	0.02	2	30	88
SS120	200	140	200	1	30	0.9	0.02	2	30	88

SMA 1A Series Schottky diode

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