SOT23 Series Schottky diode

Home » Products » Diodes » Schottky Barrier Rectifiers » SOT23 Series » SOT23 Series Schottky diode

Share to:

SOT23 Series Schottky diode

Compact package, easy to install
High-efficiency overvoltage protection device
Ultra-low forward pressure drop
Ideal products for High Frequency Circuits
Comply with relevant welding international standard MIL-STD-202

Availability:

Quantity:



Inquire Add to Basket

Schottky (Schottky) diode is also known as Schottky barrier Rectifiers (SBR),) has been in the power supply industry for 25 years, it is a low-power, ultra-high speed semiconductor devices, widely used in switching power supplies, frequency converters, Driver circuit, such as high frequency, low voltage, high current rectifier diode, continuous current diode, protection diode, or microwave communication circuit as rectifier diode, small signal detector diode.

SOT-23
Pin	BAT54	BAT54A	BAT54C	BAT54S
1	a	K1	a1	a1
2	/	K2	a2	K2
3	K1	a	K1、K2	K1、a2

Hot Tags: bat54 series sot23 smd schottky barrier diode, China, manufacturers, factory, price, Schottky Barrier Diode, Schottky Rectifier, Schottky Barrier Diodes, Schottky Diode, SMD Schottky Barrier Diode, Schottky Rectifiers

Product Category

Quick Links

Solution

Automotive System

Industrial Instrumentation

USB Interface

Parameter	Symbol	Limits	Unit
Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage	V_RRM V_RWM V_R	30	V
Forward Continuous Current	I_FM	200	mA
Power Dissipation	P_D	200	mW
Storage temperature	T_STG	-55-150	℃

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Reverse Breakdown Voltage	V_(BR)R	30			V	I_R=100μA
	V_F1			0.24	V	I_F=0.1mA
	V_F2			0.32	V	I_F=1mA
	V_F3			0.40	V	I_F=10mA
	V_F4			0.50	V	I_F=30mA
	V_F5			1	V	I_F=100mA
Reverse current	I_R			2	μA	V_R=25V
Diode Capacitance	C_D			10	pF	V_R=1V,f=1MHz
Reverse Recovery Time	t_rr			5	nS	I_F=I =10mAR I_rr=0.1XI ,R =100ΩR L

Parameter	Symbol	Limits	Unit
Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage	V_RRM V_RWM V_R	30	V
Forward Continuous Current	I_FM	200	mA
Power Dissipation	P_D	200	mW
Storage temperature	T_STG	-55-150	℃

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Reverse Breakdown Voltage	V_(BR)R	30			V	I_R=100μA
	V_F1			0.24	V	I_F=0.1mA
	V_F2			0.32	V	I_F=1mA
	V_F3			0.40	V	I_F=10mA
	V_F4			0.50	V	I_F=30mA
	V_F5			1	V	I_F=100mA
Reverse current	I_R			2	μA	V_R=25V
Diode Capacitance	C_D			10	pF	V_R=1V,f=1MHz
Reverse Recovery Time	t_rr			5	nS	I_F=I =10mAR I_rr=0.1XI ,R =100ΩR L

Symbol	Millimeters		Inches
Symbol	Min.	Max.	Min.	Max.
A	0.900	1.150	0.035	0.045
A1	0.000	0.100	0.000	0.004
A2	0.900	1.050	0.035	0.041
b	0.300	0.500	0.012	0.020
c	0.080	0.150	0.003	0.006
D	2.800	3.000	0.110	0.118
E	1.200	1.400	0.047	0.055
E1	2.250	2.550	0.089	0.100
e	0.950TYP.		0.037TYP.
e1	1.800	2.000	0.071	0.079
L	0.550REF.		0.022REF.
L1	0.300	0.500	0.012	0.020
θ	0°	8°	0°	8°

SOT23 Series Schottky diode

Product Category

Quick Links

Solution

Related News

OUR PRODUCTS

ABOUT US

MORE LINKS

CONTACT US

SOCIAL NETWORKS

Name	PD	VRRM	IF(AV)	IFRM	IFSM	VF	IR	CJ
BTA54	225	30	0.2	300	0.6	0.32 0.8	2.0	10
BAT54A	225	30	0.2	300	0.6	0.32 0.8	2.0	10
BAT54C	225	30	0.2	300	0.6	0.32 0.8	2.0	10
BAT54S	225	30	0.2	300	0.6	0.32 0.8	2.0	10