How to reduce radiated interference in EPS high-frequency dv/dt?

In power supplies (EPS), high-frequency dv/dt (voltage change rate) is one of the key factors causing radiated interference (RE). Excessive dv/dt and the resulting ringing at switching nodes generate broadband noise that radiates outwards like an antenna through chassis gaps and cables. The core of reducing radiated interference is suppressing dv/dt and controlling ringing. Measures include: connecting an RC snubber circuit in parallel across the switching transistor or using an RCD buffer circuit to absorb switching energy and slow down the voltage rise time; optimizing the drive loop impedance and layout to minimize parasitic inductance; selecting freewheeling diodes with softer recovery characteristics; and connecting small-capacity high-frequency ceramic capacitors in parallel near nodes generating high dv/dt (such as MOSFET drains). Simultaneously, ensuring the integrity of the cabinet shielding and proper grounding of cable shielding layers are crucial to blocking radiation paths.