Global
EN
Applications
Support
Support
With over a thousand cooperative customers and 17 years of service experience, we can provide you with everything from model selection to technical support
Development
Development
Our unyielding mission is to continuously innovate and lead the industry's progress.
News & Events
News & Events
We will share every little bit of our life with you at all times
About
About
Yinte Electronics integrates technology research and development, chip manufacturing, packaging and testing, sales, and service
Careers
Careers
Unleash potential together, shape a healthy future for humanity
Applications
Focus on customer's program needs, tailor-make solutions, and help you enhance the core competitiveness of your products

PD

The USB Power Delivery (PD) protocol has driven unified charging from smartphones to high-performance laptops, but its complex voltage negotiation (5 V–48 V) and bidirectional power paths place extreme demands on interface safety design. During hot-plugging of USB-C connectors, arcing-induced surge transients can occur between high-voltage VBUS and data/CC/SBU pins, risking component stress or damage, communication errors and manufacturer-specific safety issues. Additionally, ESD events and short circuit conditions can jeopardize sensitive PD control logic and data integrity.

YINT Electronics’ USB PD protection solution provides coordinated overvoltage and electrostatic discharge suppression using ultra-fast transient voltage suppressors (TVS) and high-energy surge absorbers optimized for USB-C interface characteristics. With extremely low capacitance and high withstand voltage performance, these protection elements maintain accurate PD protocol negotiation and data exchange while isolating abnormal voltage surges and safeguarding the bidirectional system between charging and powered devices.

Block diagram
Find products and reference designs for your system.
PDBlock diagram

Products

Reference designs

Gdt 气体放电管 (1)

2R1500L-5.5×6

-- 2R1500L-5.5×6, 2-electrode GDT, 1500V DC breakdown, ±20%, 5kA (8/20µs), ≤1pF.

Mov 压敏电阻 (1)

Gdt 气体放电管 (1)

2R1500L-5.5×6

-- 2R1500L-5.5×6, 2-electrode GDT, 1500V DC breakdown, ±20%, 5kA (8/20µs), ≤1pF.

Mov 压敏电阻 (1)

Tvs 瞬态抑制二极管 (1)

SMBJ440A

-- SMBJ440A, unidirectional TVS diode, VR=440V, VBR≈492–543V, VC≈713V, 600W, DO-214AA.

Tvs 瞬态抑制二极管 (1)

SMBJ400CA

-- SMBJ400CA, bidirectional TVS diode, VR=400V, VBR≈447–494V, VC≈648V, 600W.

Tvs 瞬态抑制二极管 (1)

SMBJ60CA

-- SMBJ60CA, bidirectional TVS diode, VR=60V, VBR≈66.7–73.7V, VC≈96.8V, 600W.

Zd 稳压二极管 (1)

Y1ZD5V6

-- 5.6V nominal zener voltage, 500mW power dissipation in SOD-123 package for regulation and protection.

Esd 静电保护元件 (1)

Tvs 瞬态抑制二极管 (1)

SMBJ24CA

-- SMBJ24CA, bidirectional TVS diode, VR=24V, VBR≈26.7–29.5V, VC≈38.9V, 600W.

Esd 静电保护元件 (1)

Tvs 瞬态抑制二极管 (1)

SMBJ24CA

-- SMBJ24CA, bidirectional TVS diode, VR=24V, VBR≈26.7–29.5V, VC≈38.9V, 600W.

Esd 静电保护元件 (1)

Zd 稳压二极管 (1)

Y1ZD12

-- 12V nominal zener voltage, 500mW power dissipation in SOD-123 package for voltage regulation and clamping.

Esd 静电保护元件 (1)

ESDSR05

-- SOT-143 low capacitance TVS diode array rated at 5V for ESD and surge protection
Other related