How to reduce impedance during high-frequency grounding of a power FTU?

High-frequency grounding impedance reduction requires consideration of skin effect and parasitic inductance. A multi-layer grounding structure is employed: a 2oz thick copper surface layer; a complete ground plane inner layer; and a copper surface layer at the bottom. A dense array of vias is used, with a 3mm spacing and 0.3mm aperture. Grounding pins utilize multi-point connections, with at least four grounding vias per IC. Local grounding islands are placed beneath high-frequency devices (such as clock chips). Power supply decoupling uses a parallel arrangement of multiple capacitors: 10μF + 1μF + 100nF + 10nF. The grounding trace uses a flat copper strip with a width-to-thickness ratio greater than 10:1. This design achieves a grounding impedance of less than 0.05Ω at 100MHz, improves high-frequency noise discharge efficiency, reduces radiated emissions by 15dB, and meets the EN55032 Class B limit requirements.