How to shorten the gate circuit of an EPS device to reduce noise?

Shortening the gate drive loop of power devices in an EPS is one of the most effective measures to reduce drive noise, improve switching waveforms, and reduce EMC. Shortening the loop means minimizing the area and parasitic inductance of the drive loop. Specific methods include:

1. Placing the driver IC close to the power transistor: Physically place the driver chip or module as close as possible to the gate and source/emitter pins of the driven MOSFET/IGBT.

2. Using integrated driver modules: Select intelligent power modules (IPMs) or driver modules that integrate driver ICs, isolation, protection, and other functions, with extremely short internal interconnections.

3. Optimizing PCB traces: Gate and source drive traces should be parallel and close together, preferably overlapping on adjacent layers to form small loops.

4. Using surface-mount gate resistor packages: Use 0402 or 0603 surface-mount resistors for the gate resistors and place them directly between the gate pin and the drive trace.

5. Utilizing multilayer boards: In multilayer boards, drive traces can be routed on inner layers and shielded with ground planes above and below to further reduce external interference.