Global
EN
Applications
Support
Support
With over a thousand cooperative customers and 17 years of service experience, we can provide you with everything from model selection to technical support
Development
Development
Our unyielding mission is to continuously innovate and lead the industry's progress.
News & Events
News & Events
We will share every little bit of our life with you at all times
About
About
Yinte Electronics integrates technology research and development, chip manufacturing, packaging and testing, sales, and service
Careers
Careers
Unleash potential together, shape a healthy future for humanity
News & Events
We will share every little bit of our life with you at all times
Corporate News Industry News Product Knowledge Downloads

Core Parameters of ESD Diodes

Source:Yint Time:2025-12-06 Views:347
Share:

Why Choose ESD Diodes?

     1.1  As modern electronic devices become increasingly sophisticated, electrostatic discharge (ESD) has become one of the major threats to circuit reliability.

     1.2  Even a tiny electrostatic pulse is enough to damage fragile integrated circuits.

     1.3  ESD diodes, as semiconductor devices specifically designed for electrostatic protection, provide a low-impedance discharge path on sensitive signal lines or power lines, safely shunting dangerous ESD energy to ground, thereby protecting the core chips.

     1.4 Understanding their core parameters is key to proper selection and application.

In-depth Analysis of Five Core Parameters

Selecting a suitable ESD diode is not just about package size. The following core parameters determine the quality of its protective performance and are crucial considerations for engineers during selection.

1. Clamping Voltage

   Clamping Voltage is the maximum voltage an ESD diode can maintain across its terminals when subjected to a surge. It is the most direct indicator of protection effectiveness. An ideal ESD diode should quickly "clamp" the voltage to a level far below the withstand voltage of the protected device after triggering.

For example: To protect a 5V-tolerant USB interface chip, the clamping voltage of the selected ESD diode must be well below 5V, with sufficient safety margin. Generally, the lower the clamping voltage, the more adequate the protection for the downstream circuit.

2. Peak Pulse Current and Energy Dissipation

     These two parameters together describe the intensity of electrostatic shock an ESD diode can withstand.

     Peak Pulse Current typically refers to the maximum current value the device can safely withstand during a single ESD event (e.g., 8kV contact discharge as defined by IEC 61000-4-2 standard).

     Energy Dissipation Capability reflects the device's ability to absorb and convert ESD pulse energy. For ports potentially exposed to repeated or stronger ESD threats (e.g., exposed interfaces), devices with higher ratings for these two parameters should be selected.

3. Capacitance

Capacitance is a critical parameter in high-speed circuit selection. Essentially a PN junction, an ESD diode introduces parasitic capacitance. This capacitance, in parallel with the signal line, can cause attenuation and distortion of high-speed data signals (e.g., USB 3.0, HDMI, high-speed differential lines), affecting signal integrity. Therefore, for high-speed interfaces, ESD protection devices with low capacitance (typically less than 1pF, even below 0.5pF) must be selected to provide protection while minimizing impact on signal quality.

4. Response Time

ESD events occur at the nanosecond level. Therefore, the response time of the protection device must be extremely fast, activating before the chip is damaged. High-quality ESD diodes typically have response times within 1 nanosecond. This parameter is usually determined by device structure and process and may not be directly stated in the datasheet, but can be indirectly assessed by observing how quickly the clamping voltage establishes under extremely short timeframes.

5. Working Voltage and Leakage Current

Rated Working Voltage is the continuous reverse voltage an ESD diode can withstand during normal circuit operation. It must be higher than the normal operating voltage of the protected line.

Leakage Current refers to the tiny current flowing through the device under normal operating voltage. These two parameters relate to circuit functionality and power consumption. A good ESD diode should present an extremely high impedance (very low leakage current, typically in the nanoampere range) under normal operating conditions, having almost no effect on the circuit, and instantly switch to a very low impedance when an ESD event occurs.

Conclusion: Balancing the Comprehensive Parameters

Selecting an ESD diode is an exercise in precision balancing. It requires a clamping voltage low enough to provide protection, yet capacitance small enough to ensure signal integrity.

It needs to withstand sufficiently high surge currents, yet remain virtually "invisible" during normal operation.

Engineers must make the optimal choice by comprehensively considering these core parameters based on the protected port's operating voltage, signal speed (determining sensitivity to capacitance), and the potential ESD level it may face (determining required surge capability). A thorough understanding of these parameters builds a reliable electrostatic firewall for your electronic design.

Learn about product parameters: https://yint.com.cn/products/emsproduct/esd/index.html#product

Learn more product knowledge: https://yint.com.cn/news/knowledge/index.html