The impact of device packaging on high-frequency EMC of frequency converters

The packaging of power devices has a significant impact on the high-frequency EMC performance of frequency converters. Traditional leaded packages such as TO-247 have large lead inductance, which generates large induced voltages and oscillations during high-speed switching, exacerbating EMI. Newer packages, such as modular and low-inductance packages, can greatly improve EMC. Influencing factors include: parasitic inductance within the package, especially source/emitter inductance, which superimposes with external loop inductance, affecting switching waveforms and di/dt. Parasitic capacitance within the package, such as the terminal-to-substrate capacitance of IGBT modules, affects common-mode current.

The thermal resistance and heat dissipation path of the package affect the ability to use faster drive parameters. Advanced packaging technologies, such as direct-bonded copper, sintered silver, and leadless internal connections, can significantly reduce parasitic inductance. Packages using Kelvin source pins can separate the drive circuit from the main power circuit, reducing drive noise. Modular packaging integrates multiple chips and drivers, optimizing internal interconnections. Choosing packages with low parasitic parameters and combining them with low-inductance connection technologies such as external multilayer busbars is key to improving the high-frequency EMC of inverters at the device level. Eintech collaborates with leading power device suppliers to recommend suitable package selections for customers' high-frequency, low-EMI applications.