Is PCSEMC, a SiC device energy storage system, more difficult to control than Si?

Compared to traditional Si IGBTs, SiC devices present greater challenges to PCS EMC control due to their higher switching speeds (dv/dt, di/dt) and higher operating frequencies. The difficulties lie in:

1. Wider frequency spectrum: Increased switching speeds extend the noise spectrum to higher frequencies (up to hundreds of MHz or even GHz), where the attenuation capabilities of traditional filters may be insufficient.

2. Stronger near-field radiation: Extremely high dv/dt and di/dt result in stronger near-field electromagnetic fields, making it easier to interfere with adjacent circuits through spatial coupling.

3. Greater sensitivity to parasitic parameters: Tiny parasitic inductance and capacitance in the PCB and package can cause more severe voltage overshoot and ringing.

Therefore, EMC design for SiC PCS requires stricter requirements: extremely low parasitic inductance layout (e.g., using multilayer busbars), selection of filters with better high-frequency characteristics (e.g., wideband common-mode inductors, low ESL capacitors), more refined drive design, and comprehensive shielding.