Characteristics and Development History of Silicon Carbide?

Silicon Carbide (SiC) is a material widely used in semiconductors, power electronic devices, and high-temperature resistant materials. The following is a brief overview of its characteristics and development history:

Characteristics:
1. High-Temperature Performance: SiC can operate at high temperatures, offering better thermal conductivity and high-temperature stability, with operating temperatures exceeding 1500°C.
2. High Electron Mobility: SiC has a high electron mobility, enabling the design of high-speed, high-power electronic devices.
3. High Power Density: SiC devices can handle higher power densities, reducing equipment size and improving efficiency.
4. High Voltage Resistance: SiC possesses a high breakdown electric field strength, allowing it to withstand higher voltages.

Development History:
1. In the 1950s, SiC crystal growth technology began to develop, but its applications were very limited.
2. In the late 1980s and early 1990s, significant breakthroughs were made in the growth and processing technologies of SiC materials, further advancing the research and development of SiC devices.
3. In the late 2000s, SiC started to see widespread application in high-power electronics and high-temperature fields, such as power converters, solar inverters, and electric vehicle chargers.
4. Currently, SiC technology continues to evolve and has become one of the important materials in high-efficiency power electronic devices and high-temperature material fields, gradually replacing traditional silicon materials.