Significant progress has also been made in gallium nitride (GaN) technology The team led by Professor Cui Peng and Professor Han Jisheng from the Institute of New Generation Semiconductor Materials at Shandong University has developed a new GaN high electron mobility transistor (HEMT) with a crystalline silicon nitride (SiN) cap layer. Compared with traditional devices, this device has a 41% increase in saturation current and a 30% increase in breakdown voltage. The team has grown a 2nm crystalline SiN cap layer on an AlGaN barrier layer for the first time through in-situ growth technology, reducing the interface state density, effectively suppressing peak electric field distribution, simplifying the process flow, and saving costs. It has important application potential in GaN power switches and high-power microwave fields. These technological breakthroughs indicate that semiconductor power devices are accelerating towards high performance and high reliability, which will effectively promote technological upgrading and industrial transformation in multiple industries such as new energy vehicles, aerospace, and communications. With continuous investment in research and development and collaborative innovation in the industrial chain, power device technology is expected to make more breakthroughs in the future, providing strong support for global technological development https://dpt.sdu.edu.cn/info/1037/3395.htm
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