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The PWH2H10-3R3M0T provides low impedance energy storage with strong saturation margin, enabling aggressive load-step response while maintaining inductance stability under DC bias. The molded magnetic shielding suppresses stray fields and improves EMI performance in dense micro layouts. It is ideal for smartphone PMIC rails, wearable electronics, compact POL converters, battery-powered systems, and embedded devices requiring high current in ultra thin form factors.
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