Global
CN
Applications
Support
Support
With over a thousand cooperative customers and 17 years of service experience, we can provide you with everything from model selection to technical support
Development
Development
Our unyielding mission is to continuously innovate and lead the industry's progress.
News & Events
News & Events
We will share every little bit of our life with you at all times
About
About
Yinte Electronics integrates technology research and development, chip manufacturing, packaging and testing, sales, and service
Careers
Careers
Unleash potential together, shape a healthy future for humanity
msg
Contact
News & Events
We will share every little bit of our life with you at all times
Corporate News Industry News Product Knowledge Training & Education

110V DC Bus Surge Protection Solution | Low Clamping TVS Design

Source:YINT Time:2026-05-11 Views:660
Share:

Image

Part One: Industry Pain Points (110V Bus DC-DC Power Supply)

The chip's voltage withstand window is narrow, and the system transient response is very "hard"

In 110V-class bus systems, the absolute maximum voltage tolerance of a large number of DC-DC/power management chips on the market is concentrated at the 150V level. This means that input protection must strictly limit the chip pin voltage to a safe window close to but not exceeding 150V when surges, hot-plugging, or harness-induced spikes occur. Traditional TVS devices often have a high clamping voltage under large currents, causing the chip-side voltage to still potentially exceed the window, leading to latent damage or direct failure.

2. The "More Fragile" Characteristics Brought by Process Evolution

As power chip processes evolve toward smaller line widths and higher integration, the margins of gate oxide, drift regions, and protection structures within the device are further compressed. At the same time, chips often integrate more high-voltage switching devices and control circuits. Any abnormal input spike may trigger: gate oxide stress accumulation, ESD/surge protection structure breakdown or leakage increase; internal parasitic structure conduction caused by overvoltage triggering, leading to localized overheating; parameter drift induced by repeated transients, resulting in latent failures that are "functional but unreliable."

3. System-Level Challenges: Wiring Harness, Inductance, and Switching Noise Superposition

Part 2: Our Device Solution Approach

The 110V bus often involves long wire harnesses, large loop inductance, and high di/dt from fast-switching power stages. During hot-plugging, load transients, relay switching, or external surge coupling, spike energy is released concentratedly at the input; if the clamping voltage of the protection device is not low enough or the response path is not short enough, the spike will be directly applied to the chip pins.

The design goal of the NR5.0SMDJ110CA is not to "absorb all surge energy," but rather to clamp the voltage as low and as stable as possible within the system's acceptable energy range, thereby providing a larger safety margin for DC-DC/power chips with a 150V withstand voltage.

Image Image Image Image
VC1 VC2 VC1 VC2 VC1 VC2 VC1 VC2
139.8V 140.3V 141.7V 142.5V 144.0V 144.6V 146.0V 146.6V
IPP1 IPP2 IPP1 IPP2 IPP1 IPP2 IPP1 IPP2
28.36A 28.38A 31.17A 31.18A 33.97A 33.98A 36.75A 36.76A
Image Image    
VC1 VC2 VC1 VC2        
147.6V 147.6V 149.5V 148.8V        
IPP1 IPP2 IPP1 IPP2        
39.63A 39.64A 42.98A 42.83A        

4. Routine Electrical Test Parameters

Image Image Image
VBR1 VBR2 VBR1 VBR2 VBR1 VBR2
130V 130V 130V 130V 130V 130V
IR1 IR2 IR1 IR2 IR1 IR2
0.000uA 0.051uA 0.025uA 0.000uA 0.072uA 0.000uA

5.1.2 Surge Capability Test at 50μs & 8/20μs

Surge Voltage Image Image Image
Vc@Ippmax V Ippmax A Vc@Ippmax V Ippmax A Vc@Ippmax V Ippmax A  
0.8KV 140V 288A 142V 296A 144V 296A
0.9KV 142V 226A 142V 344A 146V 336A
1.0KV 144V 392A 144V 384A 146V 384A
1.1KV 146V 432A 146V 432A 146V 432A
1.2KV 148V 472A 146V 480A 146V 462A

Design Clamping: Low Clamping + Verifiable Surge Capture

Under 1.2/50μs & 8/20μs surge conditions, test capture shows that the device's Vc@Ippmax falls approximately in the 140–148V range under 0.8–1.2kV stress (samples 2/3/4). In routine electrical testing, VBR is approximately 130V class, and the device capacitance test sample is about 876.671pF.

System Implementation Recommendations (Principles)

TVS should be placed as close as possible to the input pin of the protected chip and the return ground, with short traces and a small loop.

2. A small resistor / ferrite bead / fuse can be placed between the TVS and the bus to achieve energy limiting and graded protection (selected based on system loss tolerance).

3. For long harness applications, it is recommended to add a primary "coarse protection" at the interface side, and use this device for "fine clamping" near the chip on the board.

Part 3: Application Scenarios and Advantages

3.1 Typical Application Scenarios

This low-clamping TVS device is designed for 110V DC bus systems and is suitable for DC-DC input protection scenarios that require high power supply reliability.

In the power architecture, it can be used for the input protection of DC-DC power supplies with a chip withstand voltage rating of 150V, reducing the direct impact of surges and transient spikes on the power chip. In industrial power supplies and two-wheeled or three-wheeled electric vehicle systems, it can be applied to the front-end protection between the high-voltage battery pack and the DC-DC module. In control systems such as motor drives, fans, pumps, and compressors, it is suitable for surge suppression and stability improvement at the auxiliary power input.

Additionally, in energy storage and photovoltaic systems, this solution is well-suited for bus input protection scenarios with voltage levels ranging from 100V to 120V. However, system evaluation and device selection should be performed based on the actual surge level.

3.2 Performance Comparison with Traditional TVS Solutions

In traditional designs, TVS devices typically aim to absorb surge energy as the primary objective, but in practical applications, the more critical aspect is the precise protection of the voltage withstand window of the power supply chip. The low clamping voltage design approach has a clear advantage in this regard.

Comparison Dimension Traditional TVS (Common Solution) Low-Clamping TVS (NR5.0SMDJ110CA)
Design Objective Primarily withstand surge energy Core focus on controlling clamping voltage to match chip withstand voltage window
Clamping Performance Higher clamping voltage under high current, risk of exceeding chip withstand voltage Test captures Vc@Ippmax approximately 140–148V (0.8–1.2kV surge)
System Reliability May cause "withstands surge but damages chip" hidden failure More conducive to reducing overvoltage stress and long-term drift risk (needs to match system surge level)

3.3 Selection and Usage Recommendations

Part 4: Summary

During the system selection process, it is recommended to prioritize application in power architectures with a "bus nominal voltage of 110V and chip withstand voltage of 150V" to achieve proper matching between the clamping voltage and the device withstand voltage window.

For application environments with higher-level surges or repeated impacts, board-level testing should be used to verify device capability and evaluate design margins to ensure long-term system reliability.

In terms of PCB layout, priority should be given to ensuring that the TVS device's return path is short, low-impedance, and direct, avoiding long common-ground paths with high-current switching loops to reduce the impact of parasitic parameters on protection effectiveness. Additionally, for systems with long wire harnesses or high-inductance loops, a graded protection strategy at both the interface side and the chip side is recommended to further enhance overall surge immunity.

Summary

The NR5.0SMDJ110CA is designed for 110V bus power systems, focusing on "protecting power chips with a 150V withstand voltage window." By employing a lower clamping strategy, it reduces the clamping voltage to approximately 140–148V (as captured in testing) under typical surge conditions, helping customers reduce input overvoltage stress and minimize the risk of latent failures. It is recommended to optimize protection based on system surge levels and layout return paths to achieve "verifiable and reproducible" protection performance.