Y3ZP2D5V6

Y3ZP2D5V6 exhibits a tightly controlled breakdown voltage centered at 5.6V with low dynamic resistance to maintain stable output under load current variation, while its planar silicon junction structure provides low leakage current below breakdown and consistent temperature coefficient behavior for long-term voltage accuracy. The ultra-thin SOD323-GW package offers efficient heat dissipation for continuous operation near rated power, enabling reliable transient clamping during surge events commonly encountered in regulated DC rails, MCU supply references, battery management feedback loops, and compact power control circuitry.

DATA SHEET SAMPLE