
Data loss following an ESD test indicates that the ESD event interfered with or damaged the memory's communication link or power supply. Possible pathways include direct ESD injection into the memory or MCU causing write operation disruptions, or a transient drop in power rails leading to accidental erase/write operations. Protective measures include placing a TVS diode and sufficient decoupling capacitors near the memory's power pins. Adding ESD protection devices and connecting small resistors in series on communication lines such as I2C and SPI to dampen interference. Ensuring the memory is located away from the board edge and external interfaces in the layout. By strengthening ESD protection for power and signal lines and optimizing device layout, the integrity of critical data can be effectively guaranteed.