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ESD diode
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ESD Diodes: The Invisible Guardians of Electronic Devices. In today’s increasingly precise electronic devices, electrostatic discharge (ESD) has become a major threat to circuit reliability. A tiny static pulse is enough to damage fragile integrated circuits. ESD diodes, as specialized semiconductor devices for electrostatic protection, provide a low-impedance discharge path on sensitive signal lines or power lines, safely dissipating dangerous ESD energy to the ground, thereby protecting the core chips. Understanding their core parameters is key to proper selection and application. In-Depth Analysis of Five Core Parameters. Choosing a suitable ESD diode...

Exploring ESD Electrostatic Diodes: The Art of Balancing Depth and Speed in Chip Dicing Process. In the back-end process of semiconductor manufacturing, chip dicing is a critical step in cutting wafers into individual chips. For devices like ESD (Electrostatic Discharge) protection diodes, which have extremely high requirements for performance and reliability, parameter control in the dicing process, especially dicing depth and speed, directly affects the final product quality, yield, and even service life. This is not just simple cutting, but a precise balancing art. Dicing Depth: Ensuring Separation and Protecting Structural Balance. Dicing depth mainly refers to the cutting blade penetrating the wafer...

What is the difference between the forward conduction voltage VF of ordinary diodes and the forward breakdown voltage VBR_forward of ESD protection diodes?
First: Ordinary diode VF: The threshold voltage for PN junction conduction under forward bias (silicon diode ≈0.7V). After conduction, current increases slowly with voltage, no "breakdown" characteristic. Damage occurs when forward current is excessive due to thermal dissipation
ESD tube VBR_forward: The voltage at which avalanche breakdown occurs under forward bias. After breakdown, current surges sharply (e.g., when VBR_forward=6V)

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USB 2.0/3.0, HDMI, DP, Ethernet (RJ45), I2C/SPI bus (bidirectional communication), DC-DC power input ports, battery power supply lines, 5V/12V device power interfaces

Theoretical basis: Junction capacitance (Cj) includes depletion layer capacitance (Cd) and diffusion capacitance (Cs)

Minority carrier drift current in depletion region - significantly increases with temperature rise
1. Leakage current at PN junction surface (affected by passivation layer quality)
2. Current due to local electric field concentration caused by non-uniform doping
3. IR of ESD tubes is typically designed to be < 1µA (at 25°C), to avoid affecting the static operating point of the protected circuit

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