News & Events

Humanoid robot BMS electrostatic protection, humanoid robot sensor module electrostatic protection, humanoid robot position sensor electrostatic protection, humanoid robot motor driver electrostatic protection, humanoid robot system controller electrostatic protection, lawn mower robot electrostatic protection, floor cleaning robot electrostatic protection, robot CPU and computing board electrostatic protection, robot I/O module electrostatic protection,
Robot sensor module electrostatic protection, robot servo driver electrostatic protection, robot position sensor electrostatic protection, robot position feedback aggregator electrostatic protection, robot safety module electrostatic protection, robot teach pendant (HMI) electrostatic protection,
Robot communication module electrostatic protection, mobile robot BMS electrostatic protection, mobile robot CPU and computing module electrostatic protection, mobile robot sensor electrostatic protection, mobile robot safety module electrostatic protection, mobile robot motor control electrostatic protection, mobile robot communication module electrostatic protection

USB 2.0/3.0, HDMI, DP, Ethernet (RJ45), I2C/SPI bus (bidirectional communication), DC-DC power input ports, battery power supply lines, 5V/12V device power interfaces

Theoretical basis: Junction capacitance (Cj) includes depletion layer capacitance (Cd) and diffusion capacitance (Cs)

Minority carrier drift current in depletion region - significantly increases with temperature rise
1. Leakage current at PN junction surface (affected by passivation layer quality)
2. Current due to local electric field concentration caused by non-uniform doping
3. IR of ESD tubes is typically designed to be < 1µA (at 25°C), to avoid affecting the static operating point of the protected circuit

PESD5V0C1ULS-Q
PESD5V0C2UM-Q
PESD5V0F1BL-Q
PESD5V0F1BLD-Q
PESD5V0F1BRLD-Q
PESD5V0H1BLG-Q
PESD5V0H1BLL-Q
PESD5V0L1BA-Q
PESD5V0L1UA-Q

How does the PN junction structure (such as planar, trench) of ESD protection diodes affect their ESD discharge capability?
1. Planar PN junction:
The PN junction is located on the chip surface, junction area can be easily enlarged to withstand larger ESD pulse current (e.g., HBM 15kV), but parasitic capacitance is larger (due to large junction area), and the surface is susceptible to contamination leading to unstable breakdown voltage. Suitable for low-frequency, high-current protection scenarios (e.g., power supply VBUS)
1.1 Planar PN junction is a type formed on the surface of a semiconductor wafer through planar processes (such as photolithography, diffusion, or ion implantation)...

First, simply understand the differences between avalanche and Zener breakdown:
Avalanche breakdown: High reverse voltage enables carriers in the depletion region to gain enough energy, colliding with lattice atoms to generate new electron-hole pairs (avalanche multiplication), causing reverse current to surge sharply; Breakdown voltage increases with temperature (positive temperature coefficient), suitable for high voltage, high current scenarios (such as power supply protection)
Zener breakdown: Low reverse voltage enables the strong electric field in the depletion region to directly pull bound electrons from covalent bonds (field emission), causing reverse current to surge sharply; Breakdown voltage decreases with temperature (negative temperature coefficient)
 

1. Chip Wafer Doping Process: "Material Structure" Determines Device Characteristics Differences
 
Chip doping process is the most fundamental underlying difference between the two, directly determining key parameters such as device breakdown characteristics, chip doping process is the most fundamental underlying difference between the two, directly determining key parameters such as device breakdown characteristics, response speed, conduction capability, etc. Essentially, it adjusts doping elements (such as P-type boron, N-type phosphorus) concentration, distribution area, junction depth




Comparison Dimension
ESD Electrostatic Protection Diode
Ordinary Rectifier Diode (using...

Automotive engineers know that when locating electromagnetic interference sources in automotive electronics EMS, spectrum analyzers play a core role. They are used to capture interference frequency characteristics and locate sources combined with spatial distribution. Specific methods and parameter settings are as follows:
Step 1: Location Steps
    Preliminary frequency sweep: First use a spectrum analyzer to perform a full-band scan (usually 10kHz~6GHz, covering common automotive electronic interference bands) on the entire vehicle or target system (such as car radar, ECU), record interference signal center frequency, bandwidth, and intensity