News & Events

One  China Mobile's centralized procurement project for 5G wireless main equipment from 2025 to 2026: On June 11th, the bidding was opened, and on June 12th, China Mobile Procurement and Tendering Network released a public announcement of the selected candidates. Huawei, ZTE, Shanghai Nokia Bell, CITIC Mobile, and Ericsson won the bid. Among them, the candidates for transaction in the 2.6GHz/4.9GHz frequency band are Huawei Technologies Co., Ltd. and Huawei Technology Services Co., Ltd. consortium, ZTE Corporation, Ericsson (China) Communications Co., Ltd., and CITIC Mobile Communications

Open Alliance Test refers to a series of tests conducted by the OPEN Alliance for automotive Ethernet-related devices and systems, aimed at ensuring compatibility and interoperability between vehicle internal network components. Details are as follows:
OPEN Alliance
OPEN Alliance SIG is a non-profit open industry alliance jointly established by OEMs, tier1, and tier2, mainly consisting of over 160 automotive OEMs and suppliers worldwide, dedicated to promoting and applying Ethernet technology in automotive environments.

Significant progress has also been made in gallium nitride (GaN) technology The team led by Professor Cui Peng and Professor Han Jisheng from the Institute of New Generation Semiconductor Materials at Shandong University has developed a new GaN high electron mobility transistor (HEMT) with a crystalline silicon nitride (SiN) cap layer. Compared with traditional devices, this device has a 41% increase in saturation current and a 30% increase in breakdown voltage. The team has grown a 2nm crystalline SiN cap layer on an AlGaN barrier layer for the first time through in-situ growth technology, reducing the interface state density, effectively suppressing peak electric field distribution, simplifying the process flow, and saving costs. It has important application potential in GaN power switches and high-power microwave fields. ​ ​ These technological breakthroughs indicate that semiconductor power devices are accelerating towards high performance and high reliability, which will effectively promote technological upgrading and industrial transformation in multiple industries such as new energy vehicles, aerospace, and communications. With continuous investment in research and development and collaborative innovation in the industrial chain, power device technology is expected to make more breakthroughs in the future, providing strong support for global technological development https://dpt.sdu.edu.cn/info/1037/3395.htm

On May 13-14, 2025, the company successfully held an exhibition at the Goyang Exhibition Center in South Korea. Secretary Wang Huajie of the Songjiang District Committee personally visited South Korea to guide the company's overseas business expansion and provide a platform for the enterprise   On May 8-9, 2025, Yin Te Electronics will cross mountains and seas to showcase the company's focus and innovation in Osaka, Japan; The management of the company attaches great importance to this exhibition trip to Japan. From the preparation of exhibits to technical explanations, every detail embodies the wisdom and care of the leadership team, laying a solid foundation for the smooth development of the exhibition!   At the exhibition site, sound

According to the World Semiconductor Trade Statistics Organization (WSTS), global semiconductor sales reached $627.6 billion in 2024, a year-on-year increase of 19.1%. The organization predicts that the growth rate of the global semiconductor market will fall back to 11.2% by 2025, and the global market valuation will reach approximately $697 billion

Recently, the team led by Zhou Peng and Bao Wenzhong from Fudan University developed the world's first 32-bit RISC-V architecture microprocessor based on two-dimensional semiconductor materials; Infinite” (WUJI) appeared on the cover of Nature magazine; The processor integrates 5900 transistors and has completed independent research and development of the entire chain from materials to architecture to chip fabrication through a unique integrated process of independent innovation. Implementing multi bridge channel transistor technology with enclosed gate: For 3-5 nanometer node transistor technology, Zhou Peng's team verified that the double-layer channel thicknesses were 0.6/1.2 nanometers, respectively

Overview of Common Communication Protocol Common Mode Inductors and Electrostatic Protection Devices




Protocol
Protocol


Speed/rate
Speed


ESD S/N
ESD Protection Model

Packing Size
Package
CML S/N Common Mode Inductor Model
Packing Size Package
GMSL
12Gbps

Industrial interface communication one Modbus It is an application layer protocol widely used in industrial automation systems, supporting serial communication and TCP/IP network communication, commonly used in instruments and meters RTU、 Process automation and other fields two PROFIBUS It is a fieldbus standard used in the field of industrial automation, supporting multiple communication rates and topologies, promoted by companies such as Siemens, and widely applied in the field of process automation three Profinet Industrial communication protocol based on Ethernet, widely used in industry

One     Yin Te CML4532-510T completely replaces the following materials Brand            Part Number Wü rth Elektronik            seven hundred and forty-four million two hundred and forty-two thousand five hundred and ten TDK          &nb