Huahong Semiconductor Officially Announces: Third-Generation 90nm Embedded Flash Process Sets Minimum Size Record, Successfully Mass Produced

Today, Huahong Semiconductor officially announced the successful mass production of its third-generation 90-nanometer embedded flash memory (90nm eFlash) process platform.

According to reports, the Flash cell size of the third-generation 90nm embedded flash memory process platform has been reduced by nearly 40% compared to the second-generation process, setting a record for the smallest embedded flash memory technology size at the 90nm process node among global wafer foundries. The Flash IP offers greater area efficiency, and the number of photomask layers has been further reduced. Additionally, in terms of reliability indicators, it can achieve 100,000 erase/write cycles and 25 years of data retention.

Dr. Kong Weiran, Executive Vice President of Huahong Semiconductor, stated: In the future, Huahong Semiconductor will continue to focus on the R&D and innovation of differentiated technologies for 200mm wafers, targeting high-density smart card and high-end microcontroller markets. The company will also remain committed to providing significant optimizations in power consumption and area, extending the existing technological advantages of 200mm wafers to 300mm wafers, thereby better serving domestic and international semiconductor chip design companies and meeting market demands.