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The protocol is a digital communication standard designed specifically for point-to-point data transmission between sensors and ECU (Electronic Control Unit) in the field of automotive electronics. Its full name is the Single Edge Nibble Transmission protocol The core specification is based on SAE J2716 (the latest version being SAE J2716-201604 released in 2016) and is one of the key technologies for digital transmission of sensors in modern automobiles 1.  The application scope continues to expand Global SENT Protocol Transmission by 2025

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USB 2.0/3.0, HDMI, DP, Ethernet (RJ45), I2C/SPI bus (bidirectional communication), DC-DC power input ports, battery power supply lines, 5V/12V device power interfaces

Theoretical basis: Junction capacitance (Cj) includes depletion layer capacitance (Cd) and diffusion capacitance (Cs)

On November 10, 2025, Musk's Tesla has entered an intensive iteration stage in the development of AI chips, and its self-developed chip roadmap and supercomputing system layout are reshaping the technological landscape of autonomous driving and robotics. The following is a deep analysis based on the latest developments:
1. AI5 Chip: Architecture Innovation and Countdown to Mass Production
1. Technological breakthroughs and performance parameters
Tesla's latest AI5 chip has completed design review, marking the official entry of the chip from the research and development stage to the production preparation stage. According to Musk's disclosure, AI5 has achieved significant improvements in multiple key indicators:

Minority carrier drift current in depletion region - significantly increases with temperature rise
1. Leakage current at PN junction surface (affected by passivation layer quality)
2. Current due to local electric field concentration caused by non-uniform doping
3. IR of ESD tubes is typically designed to be < 1µA (at 25°C), to avoid affecting the static operating point of the protected circuit

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How does the PN junction structure (such as planar, trench) of ESD protection diodes affect their ESD discharge capability?
1. Planar PN junction:
The PN junction is located on the chip surface, junction area can be easily enlarged to withstand larger ESD pulse current (e.g., HBM 15kV), but parasitic capacitance is larger (due to large junction area), and the surface is susceptible to contamination leading to unstable breakdown voltage. Suitable for low-frequency, high-current protection scenarios (e.g., power supply VBUS)
1.1 Planar PN junction is a type formed on the surface of a semiconductor wafer through planar processes (such as photolithography, diffusion, or ion implantation)...

First, simply understand the differences between avalanche and Zener breakdown:
Avalanche breakdown: High reverse voltage enables carriers in the depletion region to gain enough energy, colliding with lattice atoms to generate new electron-hole pairs (avalanche multiplication), causing reverse current to surge sharply; Breakdown voltage increases with temperature (positive temperature coefficient), suitable for high voltage, high current scenarios (such as power supply protection)
Zener breakdown: Low reverse voltage enables the strong electric field in the depletion region to directly pull bound electrons from covalent bonds (field emission), causing reverse current to surge sharply; Breakdown voltage decreases with temperature (negative temperature coefficient)