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Silicon Carbide (SiC) is a material widely used in semiconductors, power electronic devices, and high-temperature resistant materials. The following is a brief overview of the characteristics and development history of silicon carbide: Characteristics: 1. High-temperature characteristics: Silicon carbide can operate at high temperatures, has better thermal conductivity and high-temperature stability, and can reach operating temperatures above 1500°C. 2. High electron mobility: Silicon carbide has high electron mobility, enabling high-speed, high-power electronic device design. 3. High...

PN usually refers to the positive-negative "positive pole-negative pole" structure, i.e., the structure between the positive pole (P region) and the negative pole (N region)

Equipped with MediaTek's latest flagship chip, the Dimensity 9200+, its iQOO Neo8 Pro 1TB version has officially gone on sale and topped the Android phone performance chart in May, providing users with a high-performance flagship experience with large memory. But this should only be the beginning of flagship phone development this year. It is rumored that MediaTek will launch a flagship chip, the Dimensity 9300, after the Dimensity 9200+by the end of the year. This chip will focus on“ Full Nuclear Power” The CPU architecture not only rivals A17 in terms of performance, but also reduces power consumption by more than 50%

TVS transient suppression diodes, differences between glass passivation and OJ acid washing processes?
1. Both glass passivation and acid washing OJ processes are used to protect the TVS PN junction surface from oxidation and corrosion. 2. TVS transient suppression diodes are usually made of silicon material because silicon material has many advantages, such as lower measurement current and higher withstand voltage capability. They can adjust voltage threshold by changing material doping concentration. 3. Glass passivation is a process that forms a glass film layer on the silicon surface, aiming to isolate the silicon surface from oxygen in the external air, preventing oxidation...

CMS: Camera Monitor System Automotive electronic rearview mirror refers to adding electronic devices to the rearview mirror of a car, replacing traditional flat rearview mirrors with cameras and displays, to achieve a wider field of view and high-definition image display. GB+15084

Recently, at the 2023 Zhongguancun Forum "Beijing (International) Third Generation Semiconductor Innovation and Development Forum", Xiang Libin, a member of the Party Group and Deputy Minister of the Ministry of Science and Technology, stated that third-generation semiconductors represented by silicon carbide and gallium nitride have excellent performance and huge markets in fields such as information and communication, rail transit, smart grids, and new energy vehicles. Overall, during the 13th Five Year Plan period, the issue of 'availability' of China's third-generation semiconductor products and related equipment has been basically resolved. During the 14th Five Year Plan period, the focus will be on addressing the issues of 'usability, ease of use' and sustainable innovation capabilities. Xiang Libin stated that the Ministry of Science and Technology will focus on key core technologies and major application directions, and will focus on breaking through technological bottlenecks in materials, devices, processes, and equipment. After years of effort, the global third-generation semiconductor industry is entering a period of rapid growth. Cao Jianlin, Chairman of the International Semiconductor Lighting Alliance and Director of the Third Generation Semiconductor Industry Technology Innovation Strategic Alliance Steering Committee, stated that "wide bandgap semiconductors, represented by third-generation semiconductors, are widely used in upgrading new energy, transportation manufacturing industries, and optoelectronic application scenarios that meet the 'dual carbon' goal. They have become an important engine for promoting innovation and upgrading in many industries." Cao Jianlin analyzed that China's development of third-generation semiconductors has already laid the foundation for technological breakthroughs and industrial coordinated development. The precision manufacturing level and supporting capabilities related to semiconductors have rapidly improved, laying a solid foundation for the localization of related equipment. Gan Yong, an academician of the CAE Member and director of the National Advisory Committee of Experts on New Material Industry Development, said for example that based on the third-generation semiconductor materials and devices, they will lead the disruptive and innovative application of high-end power equipment and promote the development of traditional power grids to semiconductor power grids. The deep integration of new generation information technology and industrialization is accelerating, creating enormous space for the development of the integrated circuit industry. Shunyi District in Beijing has initially formed an industrial chain layout from equipment to materials, chips, modules, packaging and testing, and downstream applications, gathering more than 20 upstream and downstream enterprises such as Taike Tianrun, Guolian Wanzhong, and Ruineng Semiconductor. At the forum, six industrial projects including the second phase of Guolian Wanzhong Silicon Carbide Power Chip were signed, with an estimated total investment of nearly 1.8 billion yuan. The third-generation semiconductor industry also faces many "growing pains". For example, the original innovation and application-oriented basic research capabilities are weak, key equipment and raw materials are still highly dependent on imports, there are still risks to the security of the industrial and supply chains, there is a lack of open, complete, and advanced third-generation semiconductor R&D pilot platforms, and the industrial ecosystem has not yet been established. To this end, the Third Generation Semiconductor Industry Technology Innovation Strategic Alliance and other joint initiatives have been launched, focusing on key market demands and promoting the application of "green chips" and "healthy chips" based on third-generation semiconductor materials in fields such as new energy vehicles, photovoltaic energy storage, and new displays; Focusing on collaborative innovation in the industrial chain, jointly forming innovation consortia, strengthening the construction of public technology service capabilities and standardization capabilities, forming a collaborative innovation situation of close cooperation between industry, academia, and research, connecting upstream and downstream chains, and promoting the symbiotic development of large, medium, and small enterprises. Wu Ling, Chairman of the Third Generation Semiconductor Industry Technology Innovation Strategic Alliance, believes that on the one hand, it is necessary to promote demonstration applications, connect the industrial chain, improve product competitiveness and industry leadership; On the other hand, it is necessary to gather innovative elements, actively promote international scientific and technological exchanges and cooperation, and focus on strengthening deep cooperation with small and medium-sized enterprises and R&D teams with mature technologies.

NTC Sensor Thermistor Temperature Acquisition Principle

ZnO (Zinc Oxide) varistors are non-polar adjustable resistors with instant response capability. When voltage or current exceeds a certain level, the resistance value rapidly decreases, absorbing overvoltage and overcurrent, preventing damage to brushless motors or their related devices. ZnO varistors can be used in brushless motor protection circuits to suppress transient overvoltage, overcurrent, etc., at the motor output end, protecting brushless motors and their related devices. In brushless motor protection circuits, ZnO varistors are usually installed at the motor input or output end, used in conjunction with protection elements like TVS transient suppression diodes to jointly suppress transient impacts of overvoltage and overcurrent. Additionally, to improve the effect of ZnO varistors, the following should be noted: 1. Select appropriate varistor value: According to the operating voltage and current of the brushless motor, select the appropriate varistor value of ZnO varistors. 2. Ensure sufficient power: In brushless motor protection circuits, the power of ZnO varistors should be sufficiently large to prevent device burnout or overload. 3. Optimize circuit layout: During circuit design, optimize circuit layout to reduce electromagnetic interference. 4. Note electrostatic protection: As a type of protection component, ZnO varistors also need electrostatic protection to avoid external static interference causing device damage. In summary, in brushless motor protection circuits, ZnO varistors have important application value, playing a key role in protecting brushless motors and their related devices.

Brushless motors usually use three-phase bridge circuits for driving, and their normal operating voltage and current may produce transient peak overvoltage and current due to various factors such as load changes and magnetic field interference. These transient impacts may cause device damage, such as switching tubes like MOSFETs, IGBTs, or even controllers and microcontrollers. To protect related devices of brushless motors, TVS (Transient Voltage Suppressor) transient suppression diodes can be used for protection. TVS transient suppression diodes use semiconductor materials, achieving transient suppression function through reverse breakdown of Zener diodes, capable of absorbing overvoltage and overcurrent transient impacts in an extremely short time, effectively protecting brushless motors and their related devices. In brushless motor protection circuits, TVS transient suppression diodes are usually installed at the motor input or output end to suppress transient peak voltage and current. Meanwhile, when installing TVS transient suppression diodes, the following should be noted: 1. Select appropriate voltage level: The voltage level of TVS transient suppression diodes should be slightly higher than the highest operating voltage of the brushless motor. 2. Determine circuit topology: According to the actual situation of the brushless motor, determine the placement position of TVS transient suppression diodes. 3. Strengthen PCB layout design: During circuit design, avoid interlaced arrangement of high noise areas and low noise areas in the circuit to reduce electromagnetic interference. 4. Note protective grounding: When installing TVS transient suppression diodes at the motor input and output ends, prevent external static interference and strengthen protective grounding. The above are some precautions when using TVS transient suppression diodes in brushless motor protection circuits. Reasonable protection circuit design can extend the service life of brushless motors and improve the stability and safety of the entire system.